Disordering and dopant behaviour in Au+-ion-irradiated AlN
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/19/i=35/a=356207/pdf
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1. Nitride-based semiconductors for blue and green light-emitting devices
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2. Study of the Influence of the Irradiation Flux Density on the Formation of a Defect Structure in AlN in the Case of the Effect of Overlapping of the Heavy Ion Motion Trajectories in the Near-Surface Layer;Materials;2023-07-25
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