High resolution grazing-incidence in-plane x-ray diffraction for measuring the strain of a Si thin layer
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/22/i=47/a=474004/pdf
Reference14 articles.
1. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
2. Characterization of Si/GexSi1−x structures by micro-Raman imaging
3. Unique x‐ray diffraction pattern at grazing incidence from misfit dislocations in SiGe thin films
4. Diffuse x-ray scattering of misfit dislocations at Si1−xGex/Si interfaces by triple crystal diffractometry
5. Microfocus x-ray study of selective area epitaxy of SiGe on Si
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