Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/24/i=10/a=104018/pdf
Reference33 articles.
1. Modeling the evolution of germanium islands on silicon(001) thin films
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5. SiGe intermixing in Ge/Si(100) islands
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1. Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate;Journal of Materials Chemistry C;2024
2. Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures;Materials Science in Semiconductor Processing;2017-01
3. Elastic strain relaxation of GeSi nanoislands grown on pit-patterned Si(001) substrates;Superlattices and Microstructures;2016-12
4. Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films;Physical Review B;2016-11-16
5. Continuum modelling of semiconductor heteroepitaxy: an applied perspective;Advances in Physics: X;2016-05-03
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