Transport in carbon nanotube field-effect transistors tuned using low energy electron beam exposure
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/22/i=33/a=334212/pdf
Reference28 articles.
1. Using electron and ion beams on carbon nanotube-based devices. Effects and considerations for nanofabrication
2. Response of carbon nanotube transistors to electron beam exposure
3. Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers
4. Extreme Oxygen Sensitivity of Electronic Properties of Carbon Nanotubes
5. Secondary electron emission in the scanning electron microscope
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lateral scaling and positioning effects of top-gate electrodes on single-molecule field-effect transistors;Journal of Physics: Condensed Matter;2019-04-29
2. Quasi first-principles Monte Carlo modeling of energy dissipation by low-energy electron beams in multi-walled carbon nanotube materials;Applied Physics Letters;2012-02-27
3. Simple model of bulk and surface excitation effects to inelastic scattering in low-energy electron beam irradiation of multi-walled carbon nanotubes;Journal of Applied Physics;2011-09
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