Computational study of anisotropic epitaxial recrystallization in 4H-SiC
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/20/i=12/a=125203/pdf
Reference27 articles.
1. Amorphization and recrystallization of covalent tetrahedral networks
2. Fission Product Release Behavior of Individual Coated Fuel Particles for High-Temperature Gas-Cooled Reactors
3. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
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1. The effect of cavities on recrystallization growth of high-fluence He implanted-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-12
2. Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier;Journal of Nuclear Materials;2015-09
3. Direct observations of thermally induced structural changes in amorphous silicon carbide;Journal of Applied Physics;2008-08
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