Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)-Reference-Cited by-同舟云学术

Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)

Published:2001-07-26 Issue:32 Volume:13 Page:6907-6934
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Koukitu Akinori,Kumagai Yoshinao

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference37 articles.

1. Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD process

2. Thermodynamic aspects of OMVPE

3. Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors

4. Solid composition of alloy semiconductors grown by MOVPE, MBE, VPE hand ALE

5. Thermodynamic analysis of molecular beam epitaxy of III–V semiconductors

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