Activities of dislocations in heavily impurity-doped Si
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference11 articles.
1. In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals
2. Velocities of screw and 60° dislocations in n- and p-type silicon
3. Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration
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