Intrinsically shunted NbN/TaN/NbN Josephson junctions on Si substrates for large-scale integrated circuits applications

Abstract

Abstract Superconducting circuits based on Josephson junctions have the potential to achieve high speed and ultra-low power consumption, but their integration is limited by the low controllability of Nb-based tunnel junction and the existence of shunt resistors. In this work, we report the fabrication of superconductor/normal metal/superconductor (SNS) Josephson junctions with high reproducibility on oxidized Si substrates. The junctions based on NbN/TaN/NbN trilayers measured at 4.2 K show excellent Josephson properties with a wide range of critical current (I c) from 227 to 2000 μA. The variations of critical current density (J c) and characteristic voltage (V c) are respectively less than 7.1% and 7.5% in the 2 inch region. The standard deviation of I c is calculated to be less than 1.7% for Josephson arrays with the number of junctions up to 10 000 occupying an area of 0.34 mm2. The results provide a guarantee for the applications of NbN-SNS Josephson junctions in superconducting large-scale integrated circuits.