Abstract
Abstract
Al-doped ZnO (AZO) thin films were deposited on p-type silicon (p-Si) substrates by radio frequency magnetron sputtering technology. The crystal structure, morphology characterization and elemental analysis show that AZO film grows along the c-axis (002) orientation without other impurities. The current–voltage and current-time characteristics under different illumination conditions demonstrate that the Au/AZO/p-Si diode has typical rectification behavior, excellent stability and repeatability. The photocurrent is proportional to the intensity of ultraviolet (UV) irradiation, and the photocurrent reaches 110 μA at a bias voltage of 5 V under 11.75 mW cm−2 UV light irradiation. By calculating the conduction band and valence band offset values of AZO/p-Si heterojunction, the energy band diagrams at different bias states are constructed to explain the photoelectric response behavior. These results will be helpful for the design of high-performance photodiodes.
Funder
National Natural Science Foundation of China
Guangzhou basic and applied basic research project
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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