Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga2O3 nanowire array-Reference-Cited by-同舟云学术

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Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga2O3 nanowire array

Published:2020-05-28 Issue:30 Volume:53 Page:305103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Cao Xu^ORCID,Xing Yanhui^ORCID,Li Junshuai^ORCID,Zhang Xiaodong^ORCID,He Tao,Zhang Li,Ma Yongjian,Xu Kun,Zhao Jiahao,Tang Wenbo,Zhang Baoshun

Funder

National Natural Science Foundation of China, Key Project, China

the Key Industry Technology Innovation Program of Suzhou, China

the National Natural Science Fund of China

the Natural Science Foundation of Beijing

the Natural Science Foundation of Jiangsu Province, China

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6463/ab8510/pdf

Reference23 articles.

1. Perspective—Opportunities and Future Directions for Ga2O3

2. Optical properties of gallium oxide thin films

3. Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition

4. GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

5. Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction

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1. Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices;Materials Science in Semiconductor Processing;2025-01

2. Multi-pixels gallium oxide UV detector array and optoelectronic applications;Nanotechnology;2023-11-16

3. A review of metal–semiconductor contacts for β-Ga₂O₃;Journal of Physics D: Applied Physics;2022-09-23

4. Effect of off-axis substrate angles on β-Ga2O3 thin films and solar-blind ultraviolet photodetectors grown on sapphire by MOCVD;Materials Science in Semiconductor Processing;2021-08

5. Controlled lateral epitaxial growth in vertical β-Ga2O3 nanowires on sapphire by MOCVD;Journal of Physics D: Applied Physics;2021-05-17

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