Abstract
Abstract
A novel structure of chalcogenide-based antimony selenide (Sb2Se3) which is the most promising absorber materials in the field of thin film solar cells with a tungsten diselenide (WSe2) back surface field (BSF) has been proposed in this paper. Antimony selenide (Sb2Se3) with a BSF has been observed by one-dimensional solar cell capacitance simulator (SCAPS-1D). Its recognizable properties make it one of the most usable for non-toxic solar cell absorbers. This paper demonstrated the planning and modeling of Al/FTO/n-TiO2/p-Sb2Se3/Ni (without BSF) and Al/FTO/n-TiO2/p-Sb2Se3/p+-WSe2/Ni (with BSF) structures. The capability of Al/FTO/n-TiO2/p-Sb2Se3/p+-WSe2/Ni heterojunction solar cell structure shows the promising performances. We have numerically simulated and observed the performance parameters such as power conversion efficiency (PCE), open circuit voltage (VOC), short circuit current density (JSC) and fill factor (FF) by tuning the different parameters such as thickness, doping concentration, defect density, the interface defect density, surface recombination velocity, series and shunt resistances along with temperature. The PCE of 20.61% with an absorber’s thickness of 800 nm for without BSF has been achieved. By inserting the WSe2 BSF with thickness of 100 nm, highly improving efficiency of 32.35% has been demonstrated. Our simulation and numerical analysis also provide valuable and important information that is very effective for further implementation and achieving high efficiency of thin film solar cell.