Abstract
Abstract
A study of InxSey and CuInSe2 thin films processed by the thermal co-evaporation technique by evaluating its physical properties is carried out. Both InxSey as well as CuInSe2 thin films were synthesized by multi-source thermal co-evaporation technique, using Knudsen-type effusion cells. The optical, structural, electrical, and morphological properties of each film were analyzed in order to determine the feasibility at the formation of a p-CuInSe2/n-InxSey heterojunction. InxSey films exhibited bandgap values in the range of 2.4–2.7 eV which was determined by UV–vis spectroscopic analysis. Vibrational modes associated to In2Se3 as well as Se are presented in the InxSey films according to Raman studies. The irregular morphology of the grains on the InxSey surface, with an average size of 380 nm are related to both In2Se3 and Se materials according to Raman spectroscopy and Scanning Electron Microscopy analysis. The InxSey thin films showed resistivity vales around 10–3 Ω·cm. The Hackee´s figure of Merit (FOMH) analysis supported the physical assumption that InxSey thin films are feasible to be used as window layer in a photovoltaic device because of the high values of FOMH obtained for samples processed at 300 °C. On the other hand, an influence on the morphology of the CuInSe2 films was observed when the films were synthetized at different substrate temperature. Uniform CuInSe2 films with agglomerated cauliflower-like grains with an average size of 1.8 μm were observed by SEM. The presence of binary phases within the CuInSe2 compound were detected through Raman and x-ray characterization. Average crystallite size of 61 nm and microstrain around 2.5 × 10–3 were estimated for the CuInSe2 films through x-ray analysis. According to the physical properties analyzed the InxSey/CuInSe2 semiconductor bilayer can be a suitable candidate for application in photovoltaic devices as well as charged particle detector.