Preparation and characterization of ferroelectric Hf0.5Zr0.5O2thin films grown by reactive sputtering-Reference-Cited by-同舟云学术

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Preparation and characterization of ferroelectric Hf0.5Zr0.5O2thin films grown by reactive sputtering

Published:2017-07-04 Issue:30 Volume:28 Page:305703
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lee Young Hwan,Kim Han Joon,Moon Taehwan,Kim Keum Do,Hyun Seung Dam,Park Hyeon Woo,Lee Yong Bin,Park Min Hyuk,Hwang Cheol Seong

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aa7624/pdf

Reference62 articles.

1. Ferroelectric Memories

2. The Properties of Ferroelectric Films at Small Dimensions

3. Electrode‐induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin‐film capacitors

4. Epitaxial growth of ferroelectric PLZT [(Pb, La)(Zr, Ti)O3] thin films

5. Integration of lead zirconium titanate thin films for high density ferroelectric random access memory

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