Abstract
Abstract
Here, a relative simpler and lower cost method, ion beam sputtering deposition was applied to fabricate diluted magnetic Mn
x
Ge1−x
quantum dots (QDs). The effects of Ge–Mn co-deposition amount on the morphology and crystallization of Mn0.03Ge0.97 QDs were investigated systematically by employing the atomic force microscopy and Raman spectroscopy techniques. It can be seen that the morphology, density, and crystallinity of Mn0.03Ge0.97 QDs exhibit unique evolution processes with the increase of Ge–Mn co-sputtering amount. The optimal deposition amount for realizing well size-uniform, large-aspect-ratio, and high-density QDs is also determined. The unique evolution route of diluted magnetic semiconductor QDs and the amount of co-sputtering are also discussed sufficiently.
Funder
Young Top Talent Project
the Application Basic Research Project of Yunnan Province
National Natural Science Foundation of China
Joint Foundation of Provincial Science and Technology Department-Double First-class Construction of Yunnan University
the Reserve Talents of Academic and Technical Leader Project
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Cited by
2 articles.
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