Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy

Published:2017-02-27 Issue:13 Volume:28 Page:135701
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Prieto Ivan,Kozak Roksolana,Skibitzki Oliver,Rossell Marta D,Zaumseil Peter,Capellini Giovanni,Gini Emilio,Kunze Karsten,Rojas Dasilva Yadira Arroyo,Erni Rolf,Schroeder Thomas,Känel Hans von

Funder

Deutsche Forschungsgemeinschaft

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/28/i=13/a=135701/pdf

Reference32 articles.

1. The Use of Metal-Organics in the Preparation of Semiconductor Materials

2. Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition

3. Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

4. Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector

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