Abstract
Abstract
Domain engineering plays a pivotal role in the development of ferroelectric non-volatile memory devices. In this work, we mainly focus on the domain kinetic in ion-sliced single crystal LiNbO3 thin films under tip-induced electric fields using piezoresponse force microscope (PFM). Polarization reversal takes place when the electric fields are above threshold value (coercive voltage V
c) of films. Besides, the dependence of domain dynamic on pulse duration and amplitude were investigated in detail, and specific local domain reversal (5 μm) was completed by the optimized poling condition. All the results reveal that tip-induced polarization reversal could be an effective way to domain engineering, which gives much more promising prospects regarding to the high density non-volatile ferroelectric memory devices.
Funder
the National Natural Science Foundation of China
Program for the Young Academic Leaders of the North University of China
Shanxi “1331 Project” Key Subject Construction
National Key R&D Program of China
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Cited by
4 articles.
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