Modelling thermoelectric transport in III–V nanowires using a Boltzmann transport approach: a review

Abstract

Abstract A review of models for determining the thermoelectric transport coefficients S (Seebeck coefficient), σ (electrical conductivity), and κ e (electronic thermal conductivity) is presented, for the cases of bulk and nanowire structures, along with derivations and a discussion of calculation methods. Results for the transport coefficients in GaAs, InAs, InP and InSb are used to determine the thermoelectric figure of merit, where an enhancement by two orders of magnitude is found for the nanowire case as compared with the bulk. The optimal electron concentration is determined as a function of nanowire diameter for both background and modulation doped nanowires.