Selective area growth of AlGaN nanopyramids by conventional and pulsed MOVPE
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
https://iopscience.iop.org/article/10.1088/1361-6528/abda73/pdf
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2. A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures;Cho;Nanoscale Adv.,2020
3. White light emitting diodes with super-high luminous efficacy;Narukawa;J. Phys. Appl. Phys.,2010
4. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency;Takano;Appl. Phys. Express,2017
5. The emergence and prospects of deep ultraviolet light-emitting diode technologies;Kneissl;Nat. Photonics,2019
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1. Organized AlN Nanowire Arrays by Hybrid Approach of Top-Down Processing and MOVPE Overgrowth for Deep UV Emission Devices;ACS Applied Nano Materials;2024-05-01
2. Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts;Nature Communications;2023-07-27
3. Nonpolar AlxGa1−xN/AlyGa1−yN multiple quantum wells on GaN nanowire for UV emission;Nano Research;2022-05-31
4. AlGaN Microfins as Nonpolar UV Emitters Probed by Time-Resolved Cathodoluminescence;ACS Photonics;2022-04-13
5. Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures;Nano Select;2021-07-17
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