Controlled axial and radial growth of InP nanowires by metal–organic molecular beam epitaxy using the selective-area vapor–liquid–solid approach
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/aad584/pdf
Reference20 articles.
1. Low-Threshold near-Infrared GaAs–AlGaAs Core–Shell Nanowire Plasmon Laser
2. Monolithically Integrated High-β Nanowire Lasers on Silicon
3. III-nitride core–shell nanowire arrayed solar cells
4. Selective-area vapor-liquid-solid growth of tunable InAsP quantum dots in nanowires
5. Ultraclean Emission from InAsP Quantum Dots in Defect-Free Wurtzite InP Nanowires
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions;Applied Physics Reviews;2021-06
2. Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium;Nanoscale Research Letters;2021-03-20
3. Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires;Nano Letters;2019-10-29
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