Author:
Romanov V V,Ermakov B S,Kozhevnikov V A,Stelmakh K F,Vologzhanina S A
Abstract
Abstract
The state of rare earth impurities at concentrations of about 1018 cm−3 in volume-doped AIIIBV semiconductor crystals can be described in the framework of the model of quasi-molecular rare earth centers of Ln2O3 type and spontaneous polarization regions-coupled spin-polarons localized on small donors.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献