Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects
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Published:2019-04-26
Issue:
Volume:504
Page:012021
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ISSN:1757-899X
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Container-title:IOP Conference Series: Materials Science and Engineering
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language:
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Short-container-title:IOP Conf. Ser.: Mater. Sci. Eng.
Cited by
3 articles.
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