Author:
Zhelannov A V,Seleznev B I,Fedorov D G
Abstract
Abstract
The technology of forming micro devices based on gallium nitride, including the main stages of manufacturing, namely, inter-assembly isolation, formation of non-straightening (ohmic) and straightening (Schottky barrier) contacts, surface passivation, formation of inter-electric connections in the form of “air bridges”, plate grinding, cutting plate into crystals and sorting out, is considered. A short technological cycle of manufacturing microstructures with a description of the main operations is given. As a result of this work, experimental samples of transistors with a gate length of 0.5 microns were obtained.