High-permittivity metal-insulator-metal capacitors with TiO2rutile dielectric and RuO2bottom electrode
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/8/i=1/a=012024/pdf
Reference8 articles.
1. The surface science of titanium dioxide
2. Band offsets of wide-band-gap oxides and implications for future electronic devices
3. Metal oxide gate electrodes for advanced CMOS technology
4. Characteristics of TiOx films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and water
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4. Temperature and ambient atmosphere dependent electrical characterization of sputtered IrO2/TiO2/IrO2 capacitors;Journal of Applied Physics;2022-03-07
5. Seed layer mediated growth of high dielectric and low leakage BaTiO3 thin film using two-step sputtering process;Ceramics International;2021-09
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