The semiconducting properties of HgTe-In 2 Te 3 alloys-Reference-Cited by-同舟云学术

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The semiconducting properties of HgTe-In 2 Te 3 alloys

Published:1964-06 Issue:6 Volume:15 Page:625-632
ISSN:0508-3443
Container-title:British Journal of Applied Physics
language:
Short-container-title:Br. J. Appl. Phys.

Author:

Spencer P M

Publisher

IOP Publishing

Subject

General Engineering

Link

https://iopscience.iop.org/article/10.1088/0508-3443/15/6/302/pdf

Reference16 articles.

1. Electrical properties of mercury telluride

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interpretation of the vacancy-ordering controlled growth morphology of Hg5In2Te8 precipitates in Hg3In2Te6 single crystals by TEM observation and crystallographic calculation;Journal of Alloys and Compounds;2015-02

2. HRTEM study on the ordered phases in Hg3In2Te6 crystals grown by Bridgman method;CrystEngComm;2014

3. Systems Based on HgTe;Ternary Alloys Based on II-VI Semiconductor Compounds;2013-07-11

4. Growth and electrical properties of mercury indium telluride single crystals;Materials Research Bulletin;2007-11

5. Growth, structure and electrical properties of mercury indium telluride single crystals;Journal of Physics D: Applied Physics;2007-06-15

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