Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition-Reference-Cited by-同舟云学术

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Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Published:2015-07-15 Issue:7 Volume:17 Page:073023
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Labidi Hatem,Taucer Marco,Rashidi Mohammad,Koleini Mohammad,Livadaru Lucian,Pitters Jason,Cloutier Martin,Salomons Mark,Wolkow Robert A

Funder

Alberta Innovates - Technology Futures

National Research Council Canada

Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1367-2630/17/i=7/a=073023/pdf

Reference57 articles.

1. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

2. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope

3. Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms

4. Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100)

5. Giant isotope effect in hot electron degradation of metal oxide silicon devices

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3. Model-Based Control of the Scanning Tunneling Microscope: Enabling New Modes of Imaging, Spectroscopy, and Lithography;IEEE Control Systems;2024-02

4. Enhancing the reactivity of Si(100)–Cl toward PBr3 by charging Si dangling bonds;The Journal of Chemical Physics;2023-12-01

5. A Blueprint for Machine Learning Accelerators Using Silicon Dangling Bonds;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

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