Landau levels and Shubnikov–de Haas oscillations in monolayer transition metal dichalcogenide semiconductors-Reference-Cited by-同舟云学术

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Landau levels and Shubnikov–de Haas oscillations in monolayer transition metal dichalcogenide semiconductors

Published:2015-10-02 Issue:10 Volume:17 Page:103006
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Kormányos Andor,Rakyta Péter,Burkard Guido

Funder

Fifth Framework Programme

Deutsche Forschungsgemeinschaft

Hungarian Scientific Research Funds (OTKA)

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1367-2630/17/i=10/a=103006/pdf

Reference49 articles.

1. Spin and pseudospins in layered transition metal dichalcogenides

2. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

3. k · p theory for two-dimensional transition metal dichalcogenide semiconductors

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

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2. Effective Low-Energy Hamiltonians and Unconventional Landau-Level Spectrum of Monolayer C3N;Nanomaterials;2022-12-08

3. Experimental research progress of electronic band structure and low temperature transport based on molybdenum disulfide;Acta Physica Sinica;2022

4. Optical Preparation and Coherent Control of Ultrafast Nonlinear Quantum Superpositions in Exciton Gases: A Case Study for Atomically Thin Semiconductors;Physical Review X;2020-11-24

5. High magnetic field spin-valley-split Shubnikov–de Haas oscillations in a WSe2 monolayer;Physical Review B;2020-10-06

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