Abstract
Abstract
We introduce a focussed ion beam (FIB) based ion implanter equipped with an electron beam ion source (EBIS), able to produce highly charged ions. As an example of its utilisation, we demonstrate the direct writing of nitrogen-vacancy centres in diamond using focussed, mask-less irradiation with Ar8+ ions with sub-micron three dimensional placement accuracy. The ion optical system was optimised and is characterised via secondary electron imaging. The smallest measured foci are below 200 nm, using objective aperture diameters of 5 and 10 µm, showing that nanoscale ion implantation using an EBIS is feasible.
Funder
Deutsche Forschungsgemeinschaft
Bundesministerium für Bildung und Forschung
Sächsische Aufbaubank
Leibniz-Gemeinschaft
European Union
Subject
General Physics and Astronomy
Cited by
10 articles.
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