Demonstration of a novel tunnel FET with channel sandwiched by drain
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab5434/pdf
Reference29 articles.
1. The end of CMOS scaling
2. Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold
3. A novel concept for field-effect transistors - the tunneling carbon nanotube FET
4. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
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2. Drain Source-Engineered Double-Gate Tunnel FET for Improved Performance;Journal of Electronic Materials;2024-05-07
3. Suppression of P-I-N forward leakage current in tunnel field-effect transistor;Semiconductor Science and Technology;2023-08-07
4. Analysis of the DC and RF performance of the Double-Gate-Source-Drain Schottky Barrier Tunnel Field Effect Transistor (D-G-S-D-STFET) for high frequency applications;2023 3rd International conference on Artificial Intelligence and Signal Processing (AISP);2023-03-18
5. Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET;Solid-State Electronics;2023-02
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