Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

Published:2017-01-19 Issue:2 Volume:32 Page:025010
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Browne David A,Fireman Micha N,Mazumder Baishakhi,Kuritzky Leah Y,Wu Yuh-Renn,Speck James S

Funder

Defense Threat Reduction Agency

Office of Naval Research

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/32/i=2/a=025010/pdf

Reference24 articles.

1. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

2. Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

3. Ballistic transport in GaN/AlGaN resonant tunneling diodes

4. Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of random alloy fluctuations on the carrier distribution in multicolor ( In , Ga ) N / GaN quantum well systems;Physical Review Applied;2024-02-27

2. Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors;Applied Physics Letters;2024-02-05

3. Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters;Applied Physics Letters;2023-06-12

4. Structure of V-defects in long wavelength GaN-based light emitting diodes;Journal of Applied Physics;2023-01-19

5. Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes;Materials;2021-12-20

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