Analysis of surface morphology at leakage current sources on large-area GaN-based p-i-n diodes

Abstract

Abstract This paper investigated the relationship between the leakage current of GaN-based diodes with the large size of 8 × 8 mm2 under reverse bias and their responsivity, and it was found that reducing leakage current is an important way to improve the conversion efficiency of diodes. Leakage analysis was performed separately for two sizes of diodes. The location of the leakage was found by emission microscope, and the morphology of the leakage point was analyzed using a focused ion beam and a scanning electron microscope. It was found that structural defects, which may be caused by dropping substances during material growth, can form large leakage channels.