Surface hole gas enabled transparent deep ultraviolet light-emitting diode
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aac7c1/pdf
Reference12 articles.
1. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
2. AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA
3. Ultraviolet light-emitting diodes based on group three nitrides
4. Enhancement of deep acceptor activation in semiconductors by superlattice doping
5. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
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