Electronic and optical properties of charge carriers in a GaSb quantum ring in a GaAs/Al0.6Ga0.4As quantum well
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aae3b3/pdf
Reference29 articles.
1. Study of effects of size and Ga mole content ofIn1−xGaxAs/GaAsquantum ring on excitonic properties using the variational calculation
2. Thermal emission and band-filling effects on the photoluminescence rise time of InGaAs/InAs/GaAs quantum dots
3. 106years extrapolated hole storage time in GaSb∕AlAs quantum dots
4. 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
5. The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory
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1. Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1−x/GaAs quantum dots including effects of photoexcited carriers;Journal of Applied Physics;2022-10-07
2. Manipulation of linear and nonlinear optical properties of type I and type II quantum ring GaAs/AlxGa1−xAs;Optical and Quantum Electronics;2021-04-21
3. Band alignment transition from type I to type II in GaAs / AlxGa1-x As quantum ring;Physica E: Low-dimensional Systems and Nanostructures;2021-02
4. Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well;Optical and Quantum Electronics;2020-06
5. Binding energies of excitonic complexes in type-II quantum rings from diffusion quantum Monte Carlo calculations;Physical Review B;2019-03-07
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