Investigation of the temperature dependence of the characteristics of the photodetector based on the compound InGaAsSb
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1742-6596/1352/1/012021/pdf
Reference10 articles.
1. High temperature liquid phase epitaxy of (100) oriented GaInAsSb near the miscibility gap boundary
2. Photodiodes for a 1.5–4.8 µm spectral range based on type-II GaSb/InGaAsSb heterostructures
3. Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C
4. Fullerene-containing liquid crystal spatiotemporal light modulators with surface-electromagnetic-wave-treated conducting layers
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