Properties of thin silicon carbide films prepared by rapid thermal annealing-Reference-Cited by-同舟云学术

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Properties of thin silicon carbide films prepared by rapid thermal annealing

Published:2012-03-29 Issue: Volume:356 Page:012039
ISSN:1742-6596
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Beshkova M,Grigorov K,Nedkov I,Massi M,Sismanoglu B,Maciel H,Velchev N B

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/356/i=1/a=012039/pdf

Reference10 articles.

1. Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates

2. Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates

3. Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

4. Effects of gallium doping on the properties of amorphous-SiC:H films prepared by magnetron cosputtering

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