Electrical resistivity and electronic structure of the layered oxypnictides (LaO)ZnPn; Pn = P, As, Sb
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/150/i=5/a=052259/pdf
Reference8 articles.
1. Iron-Based Layered Superconductor: LaOFeP
2. Transparent p-type semiconductor: LaCuOS layered oxysulfide
3. Electrical resistivity and photoluminescence spectrum of layered oxysulfide (LaO)CuS
4. Electronic structure of oxysulfide (LaO)CuS and(La1−xCaxO)Cu1−xNixS(x<~0.10)studied by photoemission and inverse-photoemission spectroscopies
5. Charge density distribution of transparent p-type semiconductor (LaO)CuS
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Revisiting the Structural, Electronic, and Magnetic Properties of (LaO)MnAs: Effect of Hubbard Correction and Origin of Mott-Insulating Behavior;ACS Omega;2021-02-04
2. Investigation of structural and electronic properties by pnictogen substitution in the layered oxypnictides (LaO)Zn Pn ( Pn = P, As, Sb);International Journal of Quantum Chemistry;2019-11-04
3. Charge-density study on layered oxyarsenides (LaO)MAs (M = Mn, Fe, Ni, Zn);Applied Physics Express;2017-11-07
4. Hole Doping Effects on Physical Properties of the Layered Antiferromagnetic Insulator (LaO)MnPn (Pn=P, As, Sb);Physics Procedia;2015
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