Effect of passivation on the n-InP optical and electronic properties

Abstract

Abstract The effect of sulphur surface passivation on the optical and electronic properties of InP was investigated. In the work, the approach of simultaneous measurement of the dynamics of the absorbed current and cathodoluminescence under continuous electron beam irradiation is used. This approach allows us to study the trapping of charge by traps and their influence on the luminescent properties. It was shown that hole traps are observed in the samples; moreover, the localization of a positive charge leads to an increase in the luminescence intensity. Passivation was found to significantly reduce the number of hole traps.