Author:
Kaminskii V V,Soloviev S M,Sudak N M,Zaldastanishvili M I,Sharenkova N V,Kazanin M M
Abstract
Abstract
The possibilities of increasing the voltage generated due to the thermovoltaic effect in semiconductors by increasing the generation temperature are considered. It is shown on the example of SmS that an increase in voltage can be achieved by increasing the depth of impurity donor levels in semiconductors. The magnitude of the generated voltage is 0.15V in SmS/Sm0.7Eu0.3S as against 0.05 V in undoped SmS. The possibility of obtaining generation due to the thermovoltaic effect is also considered on a classical PbTe semiconductor operating in a higher-temperature region compared to SmS. Generation value of 0.11V was obtained.
Subject
General Physics and Astronomy