Silicon dioxide films prepared by the sol-gel method for use in elements of microsystem technique

Abstract

Abstract Silicon dioxide films prepared by the sol-gel method from a solution based on tetraethoxysilane by spin-coating and subsequent thermal annealing in the temperature range from 200 to 600 °C are considered. The transmission spectra of the pure and impregnated with methyl orange silicon dioxide films are studied. It was found that the transmission of the all films depends on the annealing temperature and the impregnated films have the lower transmission than the pure ones. Studying the transmission difference between the pure and impregnated films in the band at 464 nm, corresponding to the highest absorption of methyl orange, it was determined that films annealed at 400 °C have the highest porosity.