Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method-Reference-Cited by-同舟云学术

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Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

Published:2018-11 Issue: Volume:1123 Page:012046
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Roslan Ameer F,Kaharudin K E,Salehuddin F,Zain A S M,Ahmad I,Faizah Z A N,Hazura H,Hanim A R,Idris S K,Zaiton A M,Mohamad N R,Hamid Afifah Maheran A

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/1123/i=1/a=012046/pdf

Reference21 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

2. Electric Field Effect in Atomically Thin Carbon Films

3. The rise of graphene

4. Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Virtual fabrication in modelling 14 nm horizontal double gate bilayer graphene FET NMOS/PMOS;AIP Conference Proceedings;2024

2. PREDICTIVE MODELING OF MIXED HALIDE PEROVSKITE CELL USING HYBRID L27 OA TAGUCHI-BASED GA-MLR-GA APPROACH;Jurnal Teknologi;2021-11-21

3. Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET;Journal of Physics: Conference Series;2020-03-01

4. Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method.;Journal of Physics: Conference Series;2020-03-01

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