Author:
Vinnichenko M Ya,Fedorov A D,Kharin N Yu,Panevin V Yu,Firsov D A,Nechaev D V,Ivanov S V,Jmerik V N
Abstract
Abstract
Optical absorption of s- and p-polarized light was studied in GaN/AlN quantum wells in the near-infrared spectral range. An absorption peak associated with intersubband electron transitions in quantum wells was observed near a wavelength of 1.55 μm. Optoelectronic devices based on these structures can be used in fiber-optic telecommunication technologies.
Subject
General Physics and Astronomy
Cited by
1 articles.
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