Author:
Rozhkov S A,Bakin V V,Kosolobov S N,Scheibler H E,Terekhov A S
Abstract
Abstract
The photoelectron processes in a p-GaN(Cs) photocathode with the effective negative electron affinity were studied experimentally within the 90–295 K temperature range. It was found that the photocathode illumination at the photon energies, which are below the energy gap of the p-GaN layer, increases the band bending at a semiconductor surface due to the photoemission from surface states.
Subject
General Physics and Astronomy