Author:
Bastrakova M V,Mukhamatchin K R,Kuznetsov Yu M,Dorokhin M V
Abstract
Abstract
The coefficients of mutual diffusion of silicon into germanium (and vice-versa) at temperatures of 900-1300K were found based on molecular dynamics simulation. For the characteristic temperature Tc=1100 K, which is close to the melting point of Ge, we determined the thickness of the diffusing layer for each type of atom. It is shown that the depth of diffusing significantly depends on the sintering time, and silicon atoms penetrate 1.5 times deeper into bulk germanium than germanium into silicon.
Subject
General Physics and Astronomy