Characteristics of Optical Emission Spectroscopy Spectrum on Graphite Deposition Process with Sputtering Method

Abstract

Abstract The deposition process using the sputtering method is a deposition technique that produces a thin layer. The sputtering method can be used with some modifications made to the deposition system. One of the identifications of the sputtering process can be made through the results of the Optical Emission Spectroscopy (OES) spectrum. By analyzing the OES spectrum in the sputtering system, it can be seen the condition of plasma formation in the chamber. The gas used in the deposition system is Argon. By varying the voltage, flow rate, pressure and temperature of the substrate, it is found that argon gas is ionized at a voltage of 140 V, with a flow rate of 60 ml/min, a pressure of 15 Pa and a substrate temperature of 200°C. SEM-EDX characterization of the deposition results showed that graphite growing on the substrate had been identified at around 6.5%.