Influence of magnetron sputtering modes on the parameters of ZnO:Ga films

Abstract

Abstract The aim of this work is to study the effect of magnetron sputtering modes - its technological parameters (pressure, substrate temperature and DC power source) on the morphology and electrophysical parameters of nanocrystalline ZnO:Ga films, which can be used as contact layers to nanostructures of photovoltaic converters. It was found that with an increase in the substrate temperature, the grain size decreases from 80 to 30 nm and the film surface roughness, as well as the resistivity from 1.68⋅10−1 to 1.2⋅10−2 Ω⋅cm and the mobility of charge carriers with 18.12 to 5.59 cm2/(V⋅s). In this case, the concentration of charge carriers increases from 5.59⋅1018 to 3.31 ⋅ 1020 cm−3. With an increase in the power of the DC source, the grain size increases from 35 to 90 nm and the surface roughness of the ZnO:Ga films, as well as the concentration of charge carriers from 5.91⋅1018 to 3.35⋅1020 cm−3. In this case, the resistivity decreases from 1.42⋅10−2 to 1.3⋅10−2 Ω⋅cm, and the mobility of charge carriers from 6.74 to 3.22 cm2/(V⋅s). The results obtained can be used in the development of technological processes for the manufacture of highly efficient photoelectric converters.