Measurement of free radical kinetics in pulsed plasmas by UV and VUV absorption spectroscopy and by modulated beam mass spectrometry
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics
Reference50 articles.
1. The Cutting Edge of Plasma Etching
2. Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
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5. Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Si
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