A PIC-MC simulation of the effect of frequency on the characteristics of VHF SiH4/H2discharges-Reference-Cited by-同舟云学术

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A PIC-MC simulation of the effect of frequency on the characteristics of VHF SiH4/H2discharges

Published:1999-01-01 Issue:3 Volume:8 Page:349-354
ISSN:0963-0252
Container-title:Plasma Sources Science and Technology
language:
Short-container-title:Plasma Sources Sci. Technol.

Author:

Yan M,Goedheer W J

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Reference34 articles.

1. Influence of plasma excitation frequency fora-Si:H thin film deposition

2. Frequency effects in silane plasmas for plasma enhanced chemical vapor deposition

3. Analysis of high-rate a-Si:H deposition in a VHF plasma

4. Role of ions in PECVD of amorphous silicon

5. Capacitively coupled glow discharges at frequencies above 13.56 MHz

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4. Estimations of secondary electron emission coefficients of Si, SiO₂, and polyimide electrodes in dual-frequency capacitively coupled discharge;Japanese Journal of Applied Physics;2022-11-11

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