Control of nitrogen species in helicon plasmas-Reference-Cited by-同舟云学术

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Control of nitrogen species in helicon plasmas

Published:2005-03-09 Issue:2 Volume:14 Page:283-292
ISSN:0963-0252
Container-title:Plasma Sources Science and Technology
language:
Short-container-title:Plasma Sources Sci. Technol.

Author:

Boivin R F,Scime E E

Publisher

IOP Publishing

Subject

Condensed Matter Physics

Reference86 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. GaN: Processing, defects, and devices

3. III–nitrides: Growth, characterization, and properties

4. Growth and characterization of GaN on sapphire (0001) using plasma-assisted ionized source beam epitaxy

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