A new approach for ammonia gas sensing using a source pocket dopingless tunnel FET with PANI catalyst

Abstract

Abstract This article presents a new ammonia (NH3) gas sensor designed using a dopingless tunnel field effect transistor with a SiGe source pocket (SP-DLT) and investigates its sensitivity using a polyaniline (PANI) conducting polymer as the gate catalyst. PANI nanofiber has a greater specific surface area and a linked network structure, which increases its sensing performance as a catalyst. Combining an HfO2 gate dielectric and SiGe source pocket improves the drain current. The sensing film is deprotonated when the PANI conducting polymer is exposed to the gas, reducing the film’s resistance. As a result, more electron or proton transfer is possible, ensuring a more substantial interaction between the sensor and the analyte gas. This modulates the electrical characteristics and work function of the TFET. The sensor’s electrical performance is examined in terms of drain current, average subthreshold swing (SS), electric field, band-to-band tunneling rate (BTBT), and energy band diagram for an ammonia gas pressure (AGP) range of 10−12 torr to 10−9 torr. The sensitivity and selectivity of the proposed PANI-SP-DLT sensor in terms of different metrics, including drain current, average SS, current ratio, transconductance, and gain factor, are further investigated. The study is expanded to consider the impact of temperature affectability and the germanium mole fraction on current sensitivity performance. The Silvaco ATLAS device simulator is used for the brief simulation work for the developed gas sensor.