The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures

Abstract

Abstract To determine the Al/(CMAT)/p-Si structure’s admittance analysis, capacitance/conductance versus frequency (C/G-V-f) data was obtained in the 3 kHz-3 MHz and −2/4 V ranges at room temperature. The powder form of CeMgAl11O19: Tb (CMAT) was thermally evaporated onto the front of p-Si wafer at 10−6 Torr as interfacial layer. From the Nicollian and Brews method, voltage-dependent spectra of Rs were derived for various frequencies. The parallel conductance and low-high frequency capacitance (CLF-CHF) techniques, respectively, were used to determine the voltage and frequency dependent spectra of Nss and their lifetime (τ). Surface states (Nss), which are identified by admittance measurements, emerge at the M/S interlayer because of high capacitance and conductance values at low frequencies. This can also be explained by the Nss’s ability to track ac signals well at lower frequencies. The normalized parallel conductance versus frequency (Gp/ω-f) plot under various biases shows a peak because of Nss existence. x-ray diffractometer (XRD) was used for structural investigation and the average crystal size (D) of the nanocrystals (CMAT) was found to be less than 0.34 nm by using the Debye-Scherer’s equation.