Abstract
Abstract
In this paper, an organic interlayer, Rs, and Nss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical parameters of them have been investigated. The interface-traps/states (D
it
/N
ss) were extracted from the I
F
–V
F
data as function of energy (Ec–Ess). These results show that the N
ss for MPS is much-lower than MS SD and increase from the midgap-energy towards the E
c like U-shape. Double-logarithmic I
F
–V
F
graphs of them show three linear-regimes for low, intermediate, and high-voltages and in these regimes, TM are governed by ohmic, trap/space charge limited currents (TCLCs/SCLCs), respectively. All these results show that (NG:PVP) interlayer leads to an increase in rectifier-ratio (RR = I
F
/I
R
), BH, R
sh, and decrease in N
ss, reverse saturation-current (I
o), and n. Thus, (NG:PVP) can be successfully utilized as interfacial layer with high performance characteristics.
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Cited by
14 articles.
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